This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design.
In electrical engineering, solid-state materials and the properties play an essential role. A thorough understanding of the physics of metals, insulators and semiconductor materials is essential for designing new electronic devices and circuits. After short introduction of the IC fabrication process, the course starts with the crystallography. This will be followed by the basic principle of the quantum mechanics, the sold-state physics, band-structure and the relation with electrical properties of the solid-state materials. When the material physics has been throughly understood, the physics of the semiconductor device follows quite naturally and can be understood quickly and efficiently.
